As an example, at 900V and the same ON resistance chip sizing may be minimized by 35x vs silicon MOSFETs and 10x in contrast with SJ MOSFETs. And In combination with delivering small ON resistance in a compact sort component, gate charge Qg and capacitance may be lowered also. 碳化硅功率器件产业链从上到下可分为碳化硅衬底、碳化硅外延片、碳化硅器件、功率模块及下游应用三部分。碳化硅衬底... https://sicschottkybarrierdiodes46677.losblogos.com/20072837/the-fact-about-tcigbt-that-no-one-is-suggesting